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2SB1132G-R-AB3-R Datasheet
Datasheet specifications
| Datasheet's name | 2SB1132G-R-AB3-R |
|---|---|
| File size | 64.349 KB |
| File type | |
| Number of pages | 5 |
Download Datasheet 2SB1132G-R-AB3-R |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: UTC(Unisonic Tech) 2SB1132G-R-AB3-R
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 1A
- Power Dissipation (Pd): 500mW
- Transition Frequency (fT): 150MHz
- DC Current Gain (hFE@Ic,Vce): 180@100mA,3V
- Collector Cut-Off Current (Icbo): 500nA
- Collector-Emitter Breakdown Voltage (Vceo): 32V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@500mA,50mA
- Package: SOT-89-3
- Manufacturer: UTC(Unisonic Tech)